Silicon PNP epitaxial planar type Transistor
Description
Power Transistors
2SB0968 (2SB968)
Silicon PNP epitaxial planar type
For low-frequency output amplification Complementary to 2SD1295 ■ Features
• Possible to solder radiation fin directly to printed circuit board • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC
Unit: mm
6.
5±0.
1 5.
3±0.
1 4.
35±0.
1 2.
3±0.
1 0.
5±0.
1
7.
3±0.
1
1.
8±0.
1
0.
8 max.
2.
5±0.
1
2 1 4.
6±0.
1 3
0.
75±0.
1 2.
3±0.
1
1.
0±0.
1 0.
1±0.
05 0.
5±0.
1 (5.
3) (4.
35) (3.
0)
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) www.
DataSheet4U.
com Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation (TC = 25°C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −50 −40 −5 −1.
5 −3 10 150 −55 to +150 Unit V V V A A W °C °C
1
(1.
8)
2 3
1.
0±0.
2
1: Base 2: Collector 3: Emitter EIAJ: SC-63 U-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCBO VCEO ICBO ICEO IEBO hFE1
*
Conditions IC = −1 mA, IE = 0 IC = −2 mA, IB = 0 VCB = −20 V, IE = 0 VCE = −10 V, IB = 0 VEB = −5 V, IC = 0 VCE = −5 V, IC = −1 A VCE = −5 V, IC = −1 mA IC = −1.
5 A, IB = − 0.
15 A IC = −2 A, IB = − 0.
2 A VCE = −5 V, IC = − 0.
5 A, f = 200 MHz VCB = −20 V, IE = 0, f = 1 MHz
Min −50 −40
Typ
Max
Unit V V
−1 −100 −10 80 10 −1 −1.
5 150 45 220
µA µA µA V V MHz pF
hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) VBE(sat) fT Cob
Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring metho...
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