Power-Transistor
Description
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IPB25N06S3L-22 IPI25N06S3L-22, IPP25N06S3L-22
OptiMOS®-T Power-Transistor
Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested • ESD Class 1C (HBM)
EIA/JESD22-A114-B
Product Summary V DS R DS(on),max (SMD version) ID 55 21.
3 25 V mΩ A
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Type IPB25N06S3L-22 IPI25N06S3L-22 IPP25N06S3L-22
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Ordering Code SP0000-87994 SP0000-87996 SP0000-87993
Marking 3N06L22 3N06L22 3N06L22
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse3) Drain gate voltage2) Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V DG V GS P tot T j, T stg T C=25 °C T C=25 °C I D=12 A Value 25 25 100 60 55 ±16 50 -55 .
.
.
+175 55/175/56 mJ V V W °C Unit A
Rev.
1.
0
page 1
2005-09-16
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IPB25N06S3L-22 IPI25N06S3L-22, IPP25N06S3L-22
Parameter Symbol Conditions min.
Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D=20 µA V DS=55 V, V GS=0 V, T j=25 °C V DS=55 V, V GS=0 V, T j=125 °C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=16 V, V DS=0 V V GS=5 V, I D=11 A V GS=5 V, I D=11 A, SMD version V GS=10 V, I D=17 A V GS=10 V, I D=17 A, SMD version 55 1.
2 1.
7 0.
01 2.
2 1 µ...
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