P-Channel MOSFET
Description
P-Channel 12-V (D-S) MOSFET
Si5475BDC
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.
028 at VGS = - 4.
5 V - 12 0.
039 at VGS = - 2.
5V
0.
054 at VGS = - 1.
8 V
ID (A)a -6 -6 -6
Qg (Typ.
) 15.
5 nC
FEATURES
• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFET: 1.
8 V Rated
1206-8 ChipFET 1
S
D
D D
D D
DG
S
Bottom View
G
Marking Code
BN XXX
Lot Traceability and Date Code
D
Part # Code
P-Channel MOSFET
Ordering Information: Si5475BDC-T1-E3 (Lead (Pb)-free) Si5475BDC-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
Limit
- 12
±8 - 6a - 6a - 7.
7b,c - 6.
2b,c
- 20 - 5.
2 - 1.
3b,c
6.
3
4 2.
5b,c 1.
6b,c - 55 to 150
260
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Foot (Drain)
t≤5s Steady State
Symbol RthJA RthJF
Typical 40 15
Maximum 50 20
Unit °C/W
Notes: a.
Package limited.
b.
Surface mounted on 1" x 1" FR4 board.
c.
t = 5 s.
d.
See Solder Profile (www.
vishay.
com/ppg?73257).
The 1206 ChipFET is a leadless package.
The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing.
A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.
e.
Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f.
Maximum under steady state conditions is 95 °C/W.
Document Number: 73381 S-83054-Rev.
D, 29-Dec-08
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