POWER MOSFET N-CHANNEL
Description
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Provisional Data Sheet No.
PD-9.
1555
HEXFET® POWER MOSFET
1000 Volt, 3.
5Ω HEXFET
HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry achieves very low onstate resistance combined with high transconductance.
HEXFET transistors also feature all of the well-establish advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits.
The Surface Mount Device (SMD-1) package represents another step in the continual evolution of surface mount technology.
The SMD-1 will give designers the extra flexibility they need to increase circuit board density.
International Rectifier has engineered the SMD-1 package to meet the specific needs of the power market by increasing the size of the termination pads, thereby enhancing thermal and electrical performance.
IRFNG40
N-CHANNEL
Product Summary
Part Number IRFNG40 BV DSS 1000V RDS(on) 3.
5Ω ID 3.
9A
Features:
s s s s s s s
Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light-weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C I D @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max.
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight
IRFNG40
3.
9 2.
5 15.
6 125 1.
0 ±20 530 3.
9 12.
5 1.
0 -55 to 150 300 (for 5 seconds) 2.
6 (typical)
Units A
W W/K V mJ A mJ V/ns
oC
g
To Order
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