STW14NB50
Description
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STW14NB50
N-CHANNEL 500V - 0.
40 Ω - 14A - TO-247 PowerMESH™ MOSFET
PRELIMINARY DATA
TYPE STW14NB50
s s s s
V DSS 500 V
R DS(on) < 0.
45 Ω
ID 14 A
TYPICAL RDS(on) = 0.
40 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED
3 2 1
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
s
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TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM (• ) P tot dv/dt( 1 ) Tstg Tj April 1999 Parameter Drain-source Voltage (V GS = 0)at T c = 100 C Drain- gate Voltage (R GS = 20 k Ω )at T c = 100 o C Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
Operating Junction Temperature
o o o
Value 500 500 ± 30 14 8 52 190 1.
51 4 -65 to 150 150
( 1) ISD ≤14 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit V V V A A A W W/ o C V/ns
o o
C C 1/5
(•) Pulse width limited by safe operating area
This is preliminary information on a new product now in development or undergoing evaluation.
Details are subject to change without notice.
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STW14NB50
THERMAL DATA
R thj-case
Rthj-amb
R thc-sink Tl
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose
0.
66 62.
5 0.
5 300
C/W oC/W o C/W o C
o
AVALANCHE CHARAC...
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