Intelligent Power Module
Description
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MITSUBISHI
PM75B6LA060
FLAT-BASE TYPE INSULATED PACKAGE
PM75B6LA060
FEATURE
a) Adopting new 5th generation IGBT (CSTBT TM ) chip, which performance is improved by 1µm fine rule process.
For example, typical Vce(sat)=1.
55V @Tj=125°C b) Over-temperature protection by detecting Tj of the CSTBT TM chips and error output is possible from all each conservation upper and lower arm of IPM.
c) New small package Reduce the package size by 10%, thickness by 22% from S-DASH series.
• 2φ 75A, 600V Current-sense IGBT type inverter • 75A, 600V Current-sense Chopper IGBT • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-Fo available from upper arm devices) • UL Recognized Yellow Card No.
E80276(N) File No.
E80271
APPLICATION Photo voltaic power conditioner
PACKAGE OUTLINES
L A B E L
Dimensions in mm
11 7 19.
75 (19.
75) 3.
25 16 3-2 16 3-2
120 106 16 3-2 15.
25 6-2 16 2-φ5.
5 MOUNTING HOLES 3
12
17.
5
1
P
5
9
13
19
14.
5
B
U
V
W
32
6-M5 NUTS 10.
75
(SCREWING DEPTH)
11.
75
13.
5
55
2-φ2.
5
17.
5
N
12 32.
75 23 23 23
1 22 + – 0.
5
Terminal code
19-■0.
5
7
1.
2.
3.
4.
5.
6.
7.
VUPC UFO UP VUP1 VVPC VFO VP
8.
9.
10.
11.
12.
13.
14.
VVP1 NC NC NC NC VNC VN1
15.
16.
17.
18.
19.
Br UN VN WN Fo
13 31
12
Oct.
2005
MITSUBISHI
PM75B6LA060
FLAT-BASE TYPE INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
Br FO 1.
5k
VNC WN
VN1
VN
UN
NC NC NC NC
VP VVP1 VVPC VFO
UP VUPC UFO
VUP1
1.
5k
1.
5k
GND IN Fo
Vcc
GND IN Fo
Vcc
GND IN Fo
Vcc
GND IN Fo
Vcc
GND IN Fo
Vcc
GND IN Fo
Vcc
GND SC OT OUT
GND SC OT OUT
GND SC OT OUT
GND SC OT OUT
GND SC OT OUT
GND SC OT OUT
B
N
W
V
U
P
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART
Symbol VCES ±IC ±ICP PC Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junct...
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