DC / DC Converter Applications
Description
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Ordering number : ENN7409
CPH5819
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode
CPH5819
DC / DC Converter Applications
Features
•
Package Dimensions
Composite type with an N-Channel Sillicon MOSFET unit : mm (MCH3408) and a Schottky Barrier Diode (SBS006M) 2171 contained in one package facilitating high-density mounting.
2.
9 [MOSFET] 5 4 • Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
[SBD] 1 • Short reverse recovery time.
0.
95 • Low forward voltage.
[CPH5819]
3
0.
6 0.
2
0.
15
2 0.
4
0.
6
1.
6
2.
8
0.
05
1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5
0.
2
0.
4
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 30 30 0.
5 3 --55 to +125 --55 to +125 V V A A °C °C VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (600mm2!0.
8mm) 1unit 30 ±20 1.
4 5.
6 0.
8 150 --55 to +125 V V A A W °C °C Symbol Conditions Ratings Unit
Marking : QV
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition rang...
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