GaAs Bi-directional Infrared Light Emitting Diode
Description
Infrared Light Emitting Diodes
LNA2701L
GaAs Bi-directional Infrared Light Emitting Diode
8˚
8˚
Unit : mm
For light source of VCR (VHS System)
0.5 max.
Features
Two-way directivity High-power output, high-efficiency : PO = 1.8 mW (min.) Small resin package Long lifetime, high reliability Thin type package modified from LN59
2.8±0.2 2-C0.5
8˚
26
.5
˚
...
Panasonic Semiconductor
LNA2701L PDF File
Similar Datasheet