GaAs Infrared Light Emitting Diode
Description
Infrared Light Emitting Diodes
LNA2603F
GaAs Infrared Light Emitting Diode
Unit : mm
Not soldered 0.8 max.
For optical control systems
1.5±0.2
Features
High-power output, high-efficiency : PO = 6 mW (typ.) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) Long lifetime, high reliability Thin side-view type package
3.9±0.25
4.5...
Panasonic Semiconductor
LNA2603F PDF File
Similar Datasheet