NPN TRANSISTOR
Description
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Description Features
ISSUED DATE :2003/12/12 REVISED DATE :2005/06/24C
G2N3904
N P N E P I TA X I A L P L A N A R T R A N S I S T O R
The G2N3904 is designed for general purpose switching and amplifier applications.
*Pb-free package are available *Collector-Emitter Voltage: VCEO=40V *Collect Dissipation: Pc (max) =625mW *Complementary to G2N3906
Package Dimensions
D
E S1
TO-92
A
b1 S E A T IN G PLANE
L
REF.
A S1 b b1 C
e1
e
b
C
Millimeter Min.
Max.
4.
45 4.
7 1.
02 0.
36 0.
51 0.
36 0.
76 0.
36 0.
51
REF.
D E L e1 e
Millimeter Min.
Max.
4.
44 4.
7 3.
30 3.
81 12.
70 1.
150 1.
390 2.
42 2.
66
Absolute Maximum Ratings (Ta = 25
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current(DC) Junction Temperature Storage Temperature Range Total Power Dissipation
,unless otherwise specified)
Symbol Ratings Unit
VCBO VCEO VEBO IC Tj TsTG PD ,unless otherwise specified)
Max.
50 50 200 300 850 950 300 4 8 35 35 200 50 Unit V V V nA nA mV mV mV mV
60 40 6 200 +150 -55 ~ +150 625
V V V mA
mW
Electrical Characteristics(Ta = 25
Symbol BVCBO BVCEO BVEBO ICEX IEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 hFE4 hFE5 fT Cob Cib td tr tstg tf Min.
60 40 6 650 40 70 100 60 30 300 Typ.
-
MHz pF pF ns ns ns ns
Test Conditions IC=10uA , IE=0 IC=1mA , IB=0 IE=10uA, IC=0 VCE=30V, VEB=3V VEB=3V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=1V, IC=0.
1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=50mA VCE=1V, IC=100mA VCE=20V, IE=-10mA, f=100MHz VCB=10V, f=100KHz VEB=0.
5V, f=100KHz VCC=3V, VBE(OFF)=0.
5V, IC=10mA, IB1=1mA VCC=3V, VBE(OFF)=0.
5V, IC=10mA, IB1=1mA VCC=3V, IC=10mA, IB1=-IB2=1mA VCC=3V, IC=10mA, IB1=-IB2=1mA
G2N3904
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CORPORATION
Characteristics Curve
ISSUED DATE :2003/12/12 REVISED DATE :2005/06/24C
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