GaAlAs Infrared Light Emitting Diode
Description
Infrared Light Emitting Diodes
LN78
GaAlAs Infrared Light Emitting Diode
Unit : mm
For optical control cystems
ø2.4
2.9±0.25 4.5±0.3
3.9±0.3
Features
High-power output, high-efficiency : PO = 10 mW (typ.) High-speed modulation capability : fC = 12 MHz
12.8 min.
2.8
2.4
2-1.2±0.3
Not soldered
1.2 0.9
1.7±0.2 0.8
1.5
2-0.45±0.15 1 2.54 R1.2 2
0....
Panasonic Semiconductor
LN78 PDF File
Similar Datasheet