GaAlAs Infrared Light Emitting Diode
Description
Infrared Light Emitting Diodes
LN75X
GaAlAs Infrared Light Emitting Diode
Unit : mm
For optical control systems Features
High-power output, high-efficiency : PO = 10 mW (typ.) High-speed modulation capability : fC = 12 MHz
4.5±0.3
Not soldered
ø3.5±0.2
4.8±0.3 2.4 2.4
4.2±0.3 2.3 1.9
2.8 1.8 1.0
12.8 min. 10.0 min.
2-0.98±0.2 2-0.45±0.15 0.45±0.15
2...
Panasonic Semiconductor
LN75X PDF File
Similar Datasheet