IGBT
Description
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SIGC25T60NC
IGBT Chip in NPT-technology
FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling
C
This chip is used for: • IGBT Modules Applications: • drives
G
E
Chip Type SIGC25T60NC
VCE 600V
ICn 30A
Die Size 4.
5 x 5.
71 mm2
Package sawn on foil
Ordering Code Q67050-A4143A001
MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 4.
5 x 5.
71 25.
69 / 21.
4 2x( 2.
18x1.
58 ) 0.
68 x 1.
08 100 150 270 566 Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.
65mm ; max 1.
2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C µm mm deg mm
2
Edited by INFINEON Technologies AI PS DD HV3, L 7262-M, Edition 2, 28.
11.
2003
SIGC25T60NC
MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature
1)
Symbol V CE IC Icpuls V GE Tj, Ts t g
Value 600
1)
Unit V A A V °C
90 ±20 -55 .
.
.
+150
depending on thermal properties of assembly
STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified: Parameter Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Symbol V(BR)CES VCE(sat) VGE(th) ICES IGES Conditions VGE=0V, IC =1000µA VGE=15V, IC =30A IC =700µA, VGE=VCE VCE=600V, VGE=0V VCE=0V, VGE=20V Value min.
600 1.
7 4.
5 2.
0 5.
5 2.
5 6.
5 2.
1 120 µA nA V typ.
max.
Unit
DYNAMIC CHARACTERISTICS (tested at component): Parameter Input capacitance Output capacitance Reverse tr...
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