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CER6080
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
60V, 5.6A, RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 75mΩ @VGS = 4.5V. -60V, -3.3A, RDS(ON) = 130mΩ @VGS = -10V. RDS(ON) = 180mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is...
