AUTOMOTIVE MOSFET - International Rectifier
Description
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PD - 94645A
AUTOMOTIVE MOSFET
IRF1405Z IRF1405ZS IRF1405ZL
HEXFET® Power MOSFET
D
Features
l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
VDSS = 55V
G S
RDS(on) = 4.
9mΩ ID = 75A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
TO-220AB IRF1405Z
D2Pak IRF1405ZS
TO-262 IRF1405ZL
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation
Max.
150 110 75 600 230 1.
5 ± 20
Units
A
W W/°C V mJ A mJ
Linear Derating Factor VGS Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energy EAS (Tested ) Single Pulse Avalanche Energy Tested Value
d
IAR EAR TJ TSTG
Avalanche Current
Ã
h
270 420 See Fig.
12a, 12b, 15, 16 -55 to + 175
Repetitive Avalanche Energy Operating Junction and Storage Temperature Range
g
°C 300 (1.
6mm from case ) 10 lbf in (1.
1N m)
Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB Mount, steady state)
y
y
Typ.
––– 0.
50 ––– –––
Max.
0.
65 ––– 62 40
Units
°C/W
i
HEXFET® is a registered trademark of International Rectifier.
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1
08/29/03
IRF1405Z/S/L
Electrica...
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