INSULATED GATE BIPOLAR TRANSISTOR
Description
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PD - 94381E
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
IRGB6B60KD IRGS6B60KD IRGSL6B60KD
VCES = 600V IC = 7.0A, TC=100°C
Features
Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive ...
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