RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
Description
MSC82100
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS
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EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY ∞:1 @ RATED CONDITIONS ft 1.
6 GHz TYPICAL NOISE FIGURE 15.
5 dB @ 2 GHz P OUT = 27 dBm MIN.
@ 1.
0 GHz
.
250 2LFL (S011) hermetically sealed ORDER CODE MSC82100 BRANDING 82100
PIN CONNECTION
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DESCRIPTION The MSC82100 is a hermetically sealed NPN power transistor with a fishbone, emitter finger ballasted geometry utilizing a refractory/gold metallization system.
The device is designed specifically for Class A linear applications to provide high gain and high output power at the 1.
0 dB compression point.
ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit
1.
Collector 2.
Emitter
3.
Base 4.
Emitter
PDISS IC VCE TJ T STG
Power Dissipation Device Bias Current
(see Safe Area)
— 200 20 200 − 65 to +200
W mA V °C °C
Collector-Emitter Bias Voltage* Junction Temperature Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 20 °C/W
*Applies only to rated RF amplifier operation
October 1992
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MSC82100
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min.
Typ.
Max.
Unit
BVCBO BVEBO BVCEO I CEO hFE DYNAMIC
Symbol
IC = 1mA IE = 1mA IC = 5mA VCE = 18V VCE = 5V
IE = 0mA IC = 0mA IB = 0mA IC = 100mA
45 3.
5 20 — 15
— — — — —
— — — 0.
5 120
V V V mA —
Test Conditions
Value Min.
Typ.
Max.
Unit
G P* ∆ GP * COB
* Note:
f = 1.
0 GHz f = 1.
0 GHz f = 1 MHz
POUT = 27 dBm POUT = 27 dBm VCB = 28 V ∆POUT = 10 dB
10.
5 — —
11.
5 — —
— 1 3.
2
dB dB pF
IC = 100mA
VCE = 18V
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MSC82100
TYPICAL PERFORMANCE TYPICAL POWER OUTPUT & GAIN @ 1dB COMPRESSION POINT vs FREQUENCY
TYPICAL POWER OUTPUT & GAIN @ 1dB COMPRESSION POINT vs COLLECTOR CURRENT
MAXIMUM OPERATING AREA FOR FORWARD BIAS OPERATION
TYPICAL LINEAR GAIN vs COLLECTOR CURRENT
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MSC82100
TYPICAL S −PARAMETERS
VCE = 18 V IC = 100 mA Zg = 50 ohms
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MSC82100...
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