Advanced Power MOSFET
Description
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 1.169 Ω (Typ.)
1 2 3
IRF610A
BVDSS = 200 V RDS(on) = 1.5 Ω ID = 3.3 A
TO-220
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Sym...
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