5V 128K x 8 CMOS FLASH EEPROM
Description
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$65<)343
89#45;.ð;#&026#)ODVK#((3520 )HDWXUHV
Organization: 128K × 8 bits Sector Erase architecture - Four 32K × 8 sectors Single 5.0±0.5V power supply for read/write operations High speed 120/150 ns address access time Low power consumption: - 30 mA maximum read current - 50 mA maximum program current - 1.5 mA maximum standby current - 1 mA ...
Alliance Semiconductor
AS29F010 PDF File
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