HEXFET Power MOSFET
Description
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0. 101Ω (Typ.)
IRLW/I530A
BVDSS = 100 V RDS(on) = 0.12Ω ID = 14 A
D2-PAK
2
I2-PAK
1 1 3...
Fairchild Semiconductor
IRLI530A PDF File
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