SMPS MOSFET
Description
SMPS MOSFET
PD - 94805
IRFIB7N50APbF
HEXFET® Power MOSFET
Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching High Voltage Isolation = 2.
5KVRMS Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Effective Coss specified ( See AN 1001)
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VDSS
500V
Rds(on) max
0.
52Ω
ID
6.
6A
TO-220 FULLP AK
GDS
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
6.
6 4.
2 44 60 0.
48 ± 30 6.
9 -55 to + 150 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m)
Units
A W W/°C V V/ns °C
Applicable Off Line SMPS Topologies: Two Transistor Forward Half & Full Bridge Convertors Power Factor Correction Boost
Notes through are on page 8
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1
10/31/03
IRFIB7N50APbF
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on) VGS(th) IDSS IGSS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min.
Typ.
Max.
Units Conditions 500 ––– ––– V VGS = 0V, ID = 250µA ––– 0.
61 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.
52 Ω VGS = 10V, ID = 4.
0A 2.
0 ––– 4.
0 V VDS = VGS, ID = 250µA ––– ––– 25 VDS = 500V, VGS = 0V µA ––– ––– 250 VDS = 400V, VGS = 0V, TJ = 125°C ––– ––– 100 VGS = 30V nA ––– ––– -100 VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff.
Paramete...
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