HEXFET Power MOSFET
Description
PD- 95752
IRFI734GPbF
Lead-Free
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IRFI734GPbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
+ +
-
• dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.
U.
T.
- Device Under Test
+ -
*
Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive P.
W.
Period D=
P.
W.
Period VGS=10V
D.
U.
T.
ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.
U.
T.
VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple ≤ 5%
ISD
*** VGS = 5.
0V for Logic Level and 3V Drive Devices Fig -14 For N Channel HEXFETS
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IRFI734GPbF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432 AS S E MB L E D ON WW 24 1999 IN T H E AS S E MB L Y L IN E "K " P AR T N U MB E R IN T E R N AT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE
IR F I840G 924K 34 32
Note: "P" in assembly line position indicates "Lead-Free"
D AT E COD E YE AR 9 = 1999 WE E K 24 L IN E K
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St.
, El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.
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