HEXFET Power MOSFET
Description
PD- 95934
IRFD9210PbF
Lead-Free
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IRFD9210PbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
+ +
-
• dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.
U.
T.
- Device Under Test
+ -
*
Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive P.
W.
Period D=
P.
W.
Period VGS=10V
D.
U.
T.
ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.
U.
T.
VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple ≤ 5%
ISD
*** VGS = 5.
0V for Logic Level and 3V Drive Devices Fig-14 For P Channel HEXFETS
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IRFD9210PbF
Hexdip Package Outline
Dimensions are shown in millimeters (inches)
Hexdip Part Marking Information
THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER
IRFD120 XXXX
DAT E CODE (PYWWA) P = LEAD-FREE (optional) Y = YEAR WW = WEEK A = AS S EMBLY S IT E CODE
AS S EMBLY LOT CODE
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St.
, El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.
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