HEXFET Power MOSFET
Description
PD - 95416
IRFB9N65APbF
SMPS MOSFET
Applications
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HEXFET® Power MOSFET
Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Lead-Free
VDSS
650V
RDS(on) max
0.
93Ω
ID
8.
5A
Benefits
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Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current
TO-220AB
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Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
8.
5 5.
4 21 167 1.
3 ± 30 2.
8 -55 to + 150 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m)
Units
A W W/°C V V/ns °C
Typical SMPS Topologies
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Single Transistor Flyback Single Transistor Forward
Notes
through
are on page 8
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1
06/16/04
IRFB9N65APbF
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on) VGS(th) IDSS IGSS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min.
650 ––– ––– 2.
0 ––– ––– ––– ––– Min.
3.
9 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ.
––– 0.
67 ––– ––– ––– ––– ––– ––– Typ.
––– ––– ––– ––– 14 20 34 18 1417 177 7.
0 1912 48 84
Max.
Units Conditions ––– V VGS = 0V, ID = 250µA...
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