(IRF1312x) HEXFET Power MOSFET
Description
PD- 94504
HEXFET® Power MOSFET
Applications l High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001) l Fully Characterized Avalanche Voltage and Current
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IRF1312 IRF1312S IRF1312L ID
95A
VDSS
80V
RDS(on) max
10mΩ
TO-220AB IRF1312
D2Pak IRF1312S
TO-262 IRF1312L
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
95 67 380 3.
8 210 1.
4 ± 20 5.
1 -55 to + 175 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m)
Units
A W W/°C V V/ns °C
Thermal Resistance
Parameter
RθJC RθCS RθJA RθJA Notes through Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount) are on page 11
Typ.
––– 0.
50 ––– –––
Max.
0.
73 ––– 62 40
Units
°C/W
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1
7/01/02
IRF1312/S/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min.
80 ––– ––– 3.
5 ––– ––– ––– ––– Typ.
––– 0.
078 6.
6 ––– ––– ––– ––– ––– Max.
Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 10 mΩ VGS = 10V, ID = 57A 5.
5 V VDS = VGS, ID = 250µA 1.
0 VDS = 76V, VGS = 0V µA 250 VDS = 64V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V
Dynamic @ TJ = 25°C (unless ...
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