(2N5681 / 2N5682) NPN POWER TRANSISTOR
Description
TECHNICAL DATA
NPN POWER TRANSISTOR SILICON AMPLIFIER
Qualified per MIL-PRF-19500/583 Devices 2N5681 2N5682 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS (TA = 25° C unless otherwise noted) 2N5681 Ratings Symbol
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range VCEO VCBO VEBO IC IB PT Top, Tstg Symbol RθJC 100 100 4.
0 1.
0 0.
5 1.
0 10 -65 to +200
2N5682
120 120 4.
0 1.
0 0.
5 1.
0 10 -65 to +200
Units
Vdc Vdc Vdc Adc Adc W W °C Unit 0 C
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THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 5.
7 mW/0C for TA > +250C 2) Derate linearly 57 mW/0C for TC > +250C Max.
17.
5
TO-39* (TO-205AD)
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min.
100 120 1.
0 10 Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 10 mAdc 2N5681 2N5682 Emitter-Base Cutoff Current VEB = 4.
0 Vdc Collector-Emitter Cutoff Current VCE = 70 Vdc 2N5681 VCE = 80 Vdc 2N5682 Collector-Emitter Cutoff Current VBE = 1.
5 Vdc VCE = 100 Vdc 2N5681 VCE = 120 Vdc 2N5682 Collector-Baser Cutoff Current VCE = 100 Vdc 2N5681 VCE = 120 Vdc 2N5682
V(BR)CEO
Vdc µAdc µAdc
IEBO ICEO
ICEX
100
nAdc
ICBO
100
nAdc
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120101 Page 1 of 2
2N5681, 2N5682 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min.
Max.
Unit
ON CHARACTERISTICS (3)
Forward Current Transfer Ratio IC = 250 mAdc, VCE = 2.
0 Vdc IC = 500 mAdc, VCE = 2.
0 Vdc IC = 1.
0 Adc, VCE = 2.
0 Vdc Collector-Emitter Saturation Voltage IC = 250 mAdc, IB = 25 mAdc IC = 500 mAdc, IB = 50 mAdc Base-Emitter Saturation Voltage IC = 250 mAdc, IB = 25 mAdc IC = 500 mAdc, IB = 50 mAdc hFE 40 20 5 150
VCE(sat)
0.
6 1.
0 1.
1 1.
3
Vdc
VBE(sat)
Vdc
DYNAMIC CHARACTERISTI...
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