POWER MOSFET
Description
PD- 95099
IRL5602SPbF
HEXFET® Power MOSFET
l l l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated Lead-Free
D
VDSS = -20V RDS(on) = 0.042Ω
G S
ID = -24A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve e...
Similar Datasheet
