HEXFET Power MOSFET
Description
PD - 95594
IRFIZ24EPbF
Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description
l
HEXFET® Power MOSFET
D
VDSS = 60V RDS(on) = 0.071Ω
G S
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve ...
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