2SC5242
Description
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5242
Power Amplifier Applications
2SC5242
Unit: mm
• High Collector breakdown voltage: VCEO = 230 V (min) • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 230 V
Collector-emitter voltage
VCEO 230 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 15 A
Base current
IB 1.
5 A
Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
PC 130 W
Tj 150 °C
T stg
−55 to 150
°C
JEDEC JEITA TOSHIBA
― ― 2-16C1A
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in
Weight: 4.
7 g (typ.
)
temperature, etc.
) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report
and estimated failure rate, etc).
1 2012-08-31
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
I CBO I EBO V (BR) CEO
VCB = 230 V, IE = 0 VEB = 5 V, IC = 0 IC = 50 mA, IB = 0
hFE (1) VCE = 5 V, IC = 1 A
(Note 1)
hFE (2) VCE (sat)
VCE = 5 V, IC = 7 A IC = 8 A, IB = 0.
8 A
VBE
VCE = 5 V, IC = 7 A
fT VCE = 5 V, IC = 1 A Cob VCB = 10 V, IE = 0, f = 1 MHz
Note 1:hFE (1) classification R: 55 to 110, O: 80 to 160
Marking
2SC5242
Min Typ.
Max Unit
― ― 5.
0 μA
― ― 5.
0 μA
230 ―
―
V
55 ― 1...
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