NPN Silicon Transistor
Description
KSC838
KSC838
FM Radio RF AMP, MIX, CONV, OSC, IF AMP
• High Current Gain Bandwidth Product : fT=250MHz (TYP) • Suffix “-C” means Center Collector (1.
Emitter 2.
Collector 3.
Base)
1
TO-92
1.
Emitter 2.
Base 3.
Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 35 30 4 30 250 150 -55 ~ 150 Units V V V mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VBE (on) VCE (sat) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter On Voltage Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=100µA, IE=0 IC=5mA, IB=0 IE=10µA, IC=0 VCB=30V, IE=0 VEB=4V, IC=0 VCE=12V, IC=2mA VCE=6V, IC=1mA IC=10mA, IB=1mA VCE=10V, IC=1mA VCB=10V, IE=0, f=1MHz 100 40 0.
65 0.
70 0.
1 250 2.
0 3.
2 Min.
35 30 4 0.
1 0.
1 240 0.
75 0.
4 V V MHz pF Typ.
Max.
Units V V V µA µA
hFE Classification
Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240
©2002 Fairchild Semiconductor Corporation
Rev.
A2, September 2002
KSC838
Typical Characteristics
10 9
IB = 90µA IB = 80µA
1000
VCE=12V
IC[mA], COLLECTOR CURRENT
8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10
IB = 60µA IB = 50µA IB = 40µA IB = 30µA IB = 20µA IB = 10µA
hFE, DC CURRENT GAIN
IB = 70µA
100
10 0.
1
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1.
Static Characteristic
Figure 2.
DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
32
IC=10IB
28
VCE=12V
IC[mA], COLLECTOR CURRENT
24
1
VBE(sat)
20
16
12
0.
1
VCE(sat)
8
4
0.
01 0.
1
1
10
0 0.
0
0.
2
0.
4
0.
6
0.
8
1.
0
1.
2
IC[mA], C...
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