N-Channel MOSFET
Description
CEP10N4/CEB10N4 CEI10N4/CEF10N4
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP10N4 CEB10N4 CEI10N4 CEF10N4 VDSS 450V 450V 450V 450V RDS(ON) 0.
7Ω 0.
7Ω 0.
7Ω 0.
7Ω ID 10A 10A 10A 10A e @VGS 10V 10V 10V 10V D
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
D
G
S CEB SERIES TO-263(DD-PAK)
G
G D S
CEI SERIES TO-262(I2-PAK)
G D S
CEP SERIES TO-220
G
D S
CEF SERIES TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 VDS VGS ID IDM PD EAS IAS TJ,Tstg
f
TO-220F
Units V V
450
±30
10 40 125 1.
0 450 10 -55 to 150 10 40 45 0.
36 450 10
e e
A A W W/ C mJ A C
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 1.
0 62.
5 Limit 2.
8 65 Units C/W C/W
2002.
September 4 - 50
http://www.
cetsemi.
com
CEP10N4/CEB10N4 CEI10N4/CEF10N4
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage
b c
Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss ...
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