P-Channel Enhancement Mode Field Effect Transistor
Description
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-30V, -6.2A, RDS(ON) = 33mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D1 8
CEM3307
D1 7
D2 6
D2 5
SO-8 1
1 S1
2 G1
3 S2
4 G2
ABSOLUTE MAX...
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