Dual N-Channel Enhancement Mode Field Effect Transistor
Description
CEM2108
Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES
20V, 9.5A, RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D1 8 D1 7 D2 6 D2 5
5
SO-8 1
1 S1
2 G1
3 S2
4 G2
ABSOLUTE MA...
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