P-Channel Enhancement Mode Field Effect Transistor
Description
CEH2313
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-30V, -4.6A, RDS(ON) = 60mΩ @VGS = -10V. RDS(ON) = 90mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 3 2 1 TSOP-6 S(4) G(3) D(1,2,5,6,)
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-S...
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