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PZTA92T1

Motorola

PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT


PZTA92T1
PZTA92T1

PDF File PZTA92T1 PDF File


Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PZTA92T1/D High Voltage Transistor PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 PZTA92T1 Motorola Preferred Device MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Total Power Dissipation up to TA = 25°C(1) Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value – 300 –300 – 5.
0 – 500 1.
5 – 65 to +150 150 Unit Vdc Vdc Vdc mAdc Watts °C °C SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT 4 1 2 3 CASE 318E–04, STYLE 1 TO–261AA DEVICE MARKING P2D THERMAL CHARACTERISTICS Characteristic Thermal Resistance from Junction to Ambient(1) Symbol RθJA Max 83.
3 www.
DataSheet4U.
com Unit °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –1.
0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = –100 µAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = –100 µAdc, IC = 0) Collector–Base Cutoff Current (VCB = – 200 Vdc, IE = 0) Emitter–Base Cutoff Current (VBE = – 3.
0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO – 300 – 300 – 5.
0 — — — — — – 0.
25 – 0.
1 Vdc Vdc Vdc µAdc µAdc ON CHARACTERISTICS DC Current Gain(2) (IC = – 1.
0 mAdc, VCE = – 10 Vdc) (IC = –10 mAdc, VCE = – 10 Vdc) (IC = – 30 mAdc, VCE = – 10 Vdc) Saturation Voltages (IC = –20 mAdc, IB = –2.
0 mAdc) (IC = –20 mAdc, IB = –2.
0 mAdc) hFE 25 40 25 VCE(sat) VBE(sat) — — — — — Vdc – 0.
5 – 0.
9 — DYNAMIC CHARACTERISTICS Collector–Base Capacitance @ f = 1.
0 MHz (VCB = –20 Vdc, IE = 0) Current–Gain — Bandwidth Product (IC = –10 mAdc, VCE = – 20 Vdc, f = 100 MHz) Ccb fT — 50 6.
0 — pF MHz 1.
Device mounted on a glass epoxy printed circuit board 1.
575 in.
x 1.
575 in.
x 0.
059 in.
; mounting pad for the collector lead min.
0.
93 in2.
2.
Pulse Test: Pulse Width ≤ 300 µs; Duty Cycle = 2.
0%.
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