HIGH VOLTAGE PNP TRANSISTOR
Description
UNISONIC TECHNOLOGIES CO.
, LTD
PZTA92/93
PNP SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC PZTA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier.
FEATURES
* Collector-emitter voltage: VCEO=-300V (UTC PZTA92) VCEO=-200V (UTC PZTA93)
* Complement to UTC PZTA42/43 * Collector power dissipation: PC(MAX)=1W
ORDERING INFORMATION
Ordering Number PZTA92G-AA3-R PZTA93G-AA3-R
Package
SOT-223 SOT-223
Pin Assignment 123 BCE BCE
Packing
Tape Reel Tape Reel
MARKING
PZTA92
PZTA93
www.
unisonic.
com.
tw Copyright © 2015 Unisonic Technologies Co.
, Ltd
1 of 4
QW-R207-006.
E
PZTA92/93
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
PZTA92 PZTA93
VCBO
-300 -200
V V
Collector-Emitter Voltage
PZTA92 PZTA93
VCEO
-300 -200
V V
Emitter-Base Voltage Collector Current
VEBO IC
-5 -500
V mA
Collector Power Dissipation Pc 1 W
Junction Temperature
TJ 150 °C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage BVCBO IC=-100μA, IE=0
PZTA92 PZTA93
Collector-Emitter Breakdown Voltage BVCEO IC =-1mA, IB=0
PZTA92 PZTA93
Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current
BVEBO ICBO IEBO
IE=-100μA, IC =0 VCB=-200V, IE=0 VCB=-160V, IE=0 VEB=-3V, IC =0
PZTA92 PZTA93
DC Current Gain (Note)
VCE=-10V, IC =-1mA hFE VCE=-10V, IC =-10mA
VCE=-10V, IC =-30mA Collector-Emitter Saturation Voltage VCE(SAT) IC =-20mA, IB=-2mA
Base-Emitter Saturation Voltage Current Gain Bandwidth Product
VBE(SAT) IC =-20mA, IB=-2mA fT VCE=-20V,Ic=-10mA, f=100MHz
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