N-Channel MOSFET
Description
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FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET
May 2006
FRFET
FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET
Features
• 13A, 500V, RDS(on) = 0.
54Ω @VGS = 10 V • Low gate charge (typical 43 nC) • Low Crss (typical 20pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode (typical 100ns)
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
G G DS
TO-220
FDP Series
GD S
TO-220F
FQPF Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
FQP13N50CF
13 8
(Note 1)
FQPF13N50CF
500 13* 8* 52* ± 30 530 13 19.
5 4.
5
Unit
V A A A V mJ A mJ V/ns
- Pulsed
52
195 1.
56 -55 to +150 300
48 0.
39
W W/°C °C °C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
FQP13N50CF
0.
64 62.
5
FQPF13N50CF
2.
58 62.
5
Unit
°C/W °C/W
© 2006 Fairchild Semiconductor Corporation
1
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fairchildsemi.
com
FQP13N50CF / FQPF13N50CF Rev.
A1
FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET
Package Marking and Ordering I...
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