RF Power Field Effect Transistors
Description
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Freescale Semiconductor Technical Data
Document Number: MRF6S27015N Rev.
0, 8/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2000 to 2700 MHz.
Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 160 mA, Pout = 3 Watts Avg.
, Full Frequency Band, Channel Bandwidth = 3.
84 MHz, PAR = 8.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 14 dB Drain Efficiency — 22% ACPR @ 5 MHz Offset — - 45 dBc in 3.
84 MHz Channel Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2600 MHz, 15 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • 200°C Capable Plastic Package • RoHS Compliant • In Tape and Reel.
R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
MRF6S27015NR1 MRF6S27015GNR1
2300- 2700 MHz, 3 W AVG.
, 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 1265 - 08, STYLE 1 TO - 270- 2 PLASTIC MRF6S27015NR1
CASE 1265A - 02, STYLE 1 TO - 270- 2 GULL PLASTIC MRF6S27015GNR1
Table 1.
Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value - 0.
5, +68 - 0.
5, +12 - 65 to +175 200 Unit Vdc Vdc °C °C
Table 2.
Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 7.
5 W Avg.
, Two - Tone Case Temperature 79°C, 3 W CW Symbol RθJC Value (1,2) 2.
0 2.
2 Unit °C/W
Table 3.
ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) A (Minimum) IV (Minimum)
1.
MTTF calculator available at http://www.
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