Beam Lead Schottky Diodes
Description
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Beam Lead Schottky Diodes for Mixers and Detectors (1– 26 GHz) Technical Data
HSCH-5300 Series
Features
• Platinum Tri-Metal System High Temperature Stability • Silicon Nitride Passivation Stable, Reliable Performance • Low Noise Figure Guaranteed 7.
5 dB at 26 GHz • High Uniformity Tightly Controlled Process Insures Uniform RF Characteristics • Rugged Construction 4 Grams Minimum Lead Pull • Low Capacitance 0.
10 pF Max.
at 0 V • Polyimide Scratch Protection
Outline 07
CATHODE 130 (5) 100 (4) GOLD LEADS 135 (5) 90 (3) 135 (5) 90 (3) 225 (9) 200 (8) 310 (12) 250 (10) 225 (9) 170 (7)
12 (.
5) 8 (.
3) 30 MIN (1)
Description
These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction.
Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor.
A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift.
The Agilent beam lead process allows for large beam anchor pads for rugged construction (typical 6 gram pull strength) without degrading capacitance.
SILICON
710 (28) 670 (26)
GLASS 60 (2) 40 (1)
DIMENSIONS IN µm (1/1000 inch)
Maximum Ratings
Pulse Power Incident at TA = 25°C .
.
.
1 W Pulse Width = 1 µs, Du = 0.
001 CW Power Dissipation at TA = 25°C .
.
.
150 mW Measured in an infinite heat sink derated linearly to zero at maximum rated temperature TOPR – Operating Temperature Range .
-65°C to +175 °C TSTG – Storage Temperature Range .
-65°C to +200°C Minimum Lead Strength 4 grams pull on any lead Diode Mounting Temperature .
+350°C for 10 sec.
max.
These diodes are ESD sensitive.
Handle with care to avoid static discharge through the diode.
2
Applications
The...
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