Ignition IGBT
Description
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NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL
Preferred Device
Ignition IGBT 15 Amps, 410 Volts
N−Channel DPAK, D2PAK and TO−220
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications.
Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
• Ideal for Coil−on−Plug Applications • DPAK Package Offers Smaller Footprint and Increased Board Space • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices • Low Saturation Voltage • High Pulsed Current Capability • Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Collector−Emitter Voltage Collector−Gate Voltage Gate−Emitter Voltage Collector Current−Continuous @ TC = 25°C − Pulsed ESD (Human Body Model) R = 1500 Ω, C = 100 pF ESD (Machine Model) R = 0 Ω, C = 200 pF Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VCES VCER VGE IC ESD 8.
0 ESD PD TJ, Tstg 800 107 0.
71 −55 to +175 V Watts W/°C °C 1 Value 440 440 15 15 50 Unit VDC VDC VDC ADC AAC kV TO−220AB CASE 221A STYLE 9 1 2 3 4 4 D2PAK CASE 418B STYLE 4
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15 AMPS 410 VOLTS VCE(on) 3 2.
1 V @ IC = 10 A, VGE .
4.
5 V
C
G
RG RGE
E 4 1 2 3 DPAK CASE 369C STYLE 2
2
3
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet.
DEVICE MARKING INFORMATION
See general marking information in the device marking section on page 8 of this data sheet.
Preferred devices are recommended choices for future use and best overa...
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