Advanced Power MOSFET
Description
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Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -60V Lower RDS(ON) : 0.22 Ω (Typ.)
1
SFR/U2955
BVDSS = -60 V RDS(on) = 0.3 Ω ID = -7.6 A
D-PAK
2 1 3
I-PAK
2
3
1. Gate 2. Drain...
Fairchild Semiconductor
SFR2955 PDF File
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