IGBT - eupec GmbH
Description
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DataSheet4U.
com
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1600 R 17 KF6 B2
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw.
current Grenzlastintegral der Diode 2 I t - value, Diode Isolations-Prüfspannung insulation test voltage tp = 1 ms TC = 80 °C TC = 25 °C tP = 1 ms, TC = 80°C VCES IC,nom.
IC ICRM 1700 1600 3200 3200 V A A A
TC=25°C, Transistor
Ptot
12,5
kW
VGES
+/- 20V
V
IF
1600
A
IFRM
3200
A
VR = 0V, t p = 10ms, T Vj = 125°C
2 I t
980
kA2s
RMS, f = 50 Hz, t = 1 min.
VISOL
4
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazität input capacitance Rückwirkungskapazität reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 1600A, V GE = 15V, Tvj = 25°C IC = 1600A, V GE = 15V, Tvj = 125°C IC = 130mA, VCE = VGE, Tvj = 25°C VGE(th) 4,5 VCE sat
min.
typ.
2,6 3,1 5,5
max.
3,1 3,6 6,5 V V V
VGE = -15V .
.
.
+15V
QG
19
µC
f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V
Cies
105
nF
f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V VCE = 1700V, V GE = 0V, Tvj = 25°C VCE = 1700V, V GE = 0V, Tvj = 125°C VCE = 0V, V GE = 20V, Tvj = 25°C
Cres ICES
5,3 0,04 20 3 160 400
nF mA mA nA
IGES
prepared by: Oliver Schilling approved by: Chr.
Lübke; 11.
10.
99
date of publication: 4.
9.
1999 revision: 2 (Serie)
1(8)
FZ1600R17KF6B2
Technische Information ...
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