HIGH CURRENT TRANSISTOR
Description
UNISONIC TECHNOLOGIES CO.
, LTD
UP1855
PNP SILICON TRANSISTOR
HIGH CURRENT TRANSISTOR
FEATURES
* High current switching * Low VCE(SAT) * High hFE
1 SOT-223
ORDERING INFORMATION
Ordering Number
Package
UP1855G-x-AA3-R
SOT-223
Note: Pin Assignment: E: Emitter B: Base C: Case
Pin Assignment 123 BCE
Packing Tape Reel
MARKING
www.
unisonic.
com.
tw Copyright © 2015 Unisonic Technologies Co.
, Ltd
1 of 4
QW-R207-011.
H
UP1855
PNP SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (TA= 25C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-180
V
Collector-Emitter Voltage
VCEO
-140
V
Emitter-Base Voltage
VEBO
-6
V
Peak Pulse Current
ICM -10 A
Continuous Collector Current
IC -4 A
Power Dissipation (Ta = 25C ) (Note 2)
PD
3W
Junction Temperature
TJ
+150
C
Storage Temperature
TSTG
-40 ~ +150
C
Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
The power which can be dissipated assuming the device is mounted in a typical manner on a P.
C.
B.
with
copper equal to 4 square inch minimum
ELECTRICAL CHARACTERISTICS (TA= 25C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BVCBO IC = -100µA
Collector-Emitter Breakdown Voltage BVCEO IC = -10mA
Emitter-Base Breakdown Voltage
BVEBO IE = -100µA (Note)
Collector Cut-off Current
ICBO
VCB=-150V VCB=-150V, Ta=100°C
Emitter Cut-off Current
IEBO VEB=-6V
IC=-100mA, IB=-5mA (Note)
Collector-Emitter Saturation Voltage
VCE (SAT)
IC=-500mA, IB=-50mA (Note) IC=-1A, IB=-100mA (Note)
IC=-3A, IB=-300mA (Note)
Base-Emitter Saturation Voltage
VBE (SAT) IC=-3A, IB=-300mA (Note)
Base-Emitter Turn-On Voltage
VBE (ON) VCE=-5V , IC=-3A (Note)
hFE1 VCE=-5V , IC=-10mA (Note)
DC Current Gain
hFE2 VCE=-5V , IC=-1A (Note) hFE3 VCE=-5V , IC=-3A (Note)
...
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