SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
Description
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ADVANCE INFORMATION
S29WS-N MirrorBit™ Flash Family
S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.
8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
Data Sheet
Notice to Readers: The Advance Information status indicates that this document contains information on one or more products under development at Spansion LLC.
The information is intended to help you evaluate this product.
Do not design in this product without contacting the factory.
Spansion LLC reserves the right to change or discontinue work on this proposed product without notice.
Publication Number S29WS-N_00
Revision G
Amendment 0
Issue Date January 25, 2005
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S29WS-N MirrorBit™ Flash Family
S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.
8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
Data Sheet
ADVANCE INFORMATION
General Description
The Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology.
These burst mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks using separate data and address pins.
These products can operate up to 80 MHz and use a single VCC of 1.
7 V to 1.
95 V that makes them ideal for today’s demanding wireless applications requiring higher density, better performance and lowered power consumption.
Distinctive Characteristics
Single 1.
8 V read/program/erase (1.
70–1.
95 V) 110 nm MirrorBit™ Technology Simultaneous Read/Write operation with zero latency 32-word Write Buffer Sixteen-bank architecture consisting of 16/8/4 Mwords for WS256N/128N/064N, respectively Four 16 Kword sectors at both top and bottom of memory array 254/126/62 64 Kword sectors (WS256N/128N/ 064N) Programmable burst read modes — Linear for 32, 16 or 8 words linear read with or without wrap-around — Continuous sequential read mode SecSi™ (S...
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