N-CHANNEL Power MOSFET - ST Microelectronics
Description
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STL100NH3LL
N-CHANNEL 30V - 0.
0032Ω - 25A PowerFLAT™ (6x5) STripFET™ III MOSFET
PRODUCT PREVIEW
Table 1: General Features
TYPE STL100NH3LL
■ ■ ■ ■ ■ ■
Figure 1: Package
RDS(on) ID 25 A (1)
VDSS 30 V
< 0.
0035 Ω
TYPICAL R DS(on) = 0.
0032Ω @ 10V IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE (1mm MAX) VERY LOW THERMAL RESISTANCE CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED
PowerFLAT (6x5)
DESCRIPTION The STL100NH3LL utilizes the latest advanced design rules of ST’s proprietary STripFET™ Technology.
This process complete to unique metallization technique realised the most advanced low voltage MOSFET in PowerFLAT(6x5).
The Chipscaled PowerFLAT™ package allows a significant board space saving, still boosting the performance.
Figure 2: Internal Schematic Diagram
APPLICATIONS ■ HIGH-EFFICIENCY DC-DC CONVERTERS ■ SYNCHRONOUS RECTIFICATION
Table 2: Order Codes
SALES TYPE STL100NH3LL MARKING L100NH3LL PACKAGE PowerFLAT™( 6x5 ) PACKAGING TAPE & REEL
Rev.
4 October 2005
This is a preliminary information on a new product now in development.
Details are subjet to change without notice
1/10
STL100NH3LL
Table 3: Absolute Maximum ratings
Symbol VDS VGS ID (2) ID IDM (3) ID (1) PTOT (2) PTOT(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Drain Current (continuous) at TC = 25°C Total Dissipation at TC = 25°C Total Dissipation at TC = 25°C Derating Factor Storage Temperature Operating Junction Temperature Range Value 30 ±16 100 15.
6 100 25 80 4 0.
03 -55 to 150 Unit V V A A A A W W W/°C °C
Table 4: Thermal Data
Rthj-C Rthj-pcb (4) Thermal Resistance Junction-case ( Drain) (Steady State) Thermal Operating Junction-pcb 1.
56 31.
3 °C/W °C/W
Table 5: Avalanche Characteristics
Symbol IAV EAS Parameter Not-Repetitive Avalanche Current (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C...
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