N-Channel MOSFET
Description
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AOD454Y N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD454Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and general purpose applications.
Standard product AOD454Y is Pb free, inside and out.
It uses Pb-free die attach and plating material(meets ROHS & Sony 259 specifications).
AOD454YL is a Green Product ordering option.
AOD454Y and AOD454YL are electrically identical.
TO-252 D-PAK
Features
VDS (V) = 40V ID = 12 A (VGS = 10V) RDS(ON) < 33 mΩ (VGS = 10V) RDS(ON) < 47 mΩ (VGS = 4.
5V)
D
Top View Drain Connected to Tab
G S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current
C C C
Maximum 40 ±20 12 12 30 12 20 20 10 2 1.
3 -55 to 175
Units V V A A mJ W W °C
TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C
Repetitive avalanche energy L=0.
1mH Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC
Typ 17.
4 50 4
Max 30 60 7.
5
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AOD454Y
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=10mA, VGS=0V VDS=32V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=12A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.
5V, ID=6A Forward Transconductance VDS=5V, ID=12A IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C 1 30 25 39 34 25 0.
76 1 12 404 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 95 37 2.
7 9.
2 VGS=10V, VDS=20V, ID=12A 4.
5 1.
6 2.
6 3.
5 VGS=10V, VDS=20V, RL=1.
7Ω, RGEN=3Ω IF=12A...
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