N-Channel MOSFET
Description
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Si6434DQ
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30 0.
042 @ VGS = 4.
5 V
rDS(on) (W)
0.
028 @ VGS = 10 V
ID (A)
"5.
6 "4.
5
D
TSSOP-8
D S S G 1 2 3 4 Top View S* N-Channel MOSFET
D
Si6434DQ
8 7 6 5
D S S D G
* Source Pins 2, 3, 6 and 7 must be tied common.
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg
Symbol
VDS VGS
Limit
30 "20 "5.
6 "4.
4 "30 1.
25 1.
5
Unit
V
A
W 1.
0 –55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Notes a.
Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70178 S-49534—Rev.
D, 06-Oct-97 www.
Vishay Siliconix.
com S FaxBack 408-970-5600
Symbol
RthJA
Limit
83
Unit
_C/W
1
Si6434DQ
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On-State On State Resistancea Drain-Source Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) DS( ) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 5.
6 A VGS = 4.
5 V, ID = 3.
5 A VDS = 15 V, ID = 5.
6 A IS = 1.
25 A, VGS = 0 V 20 0.
022 0.
030 14 0.
75 1.
1 0.
028 0.
042 W S V 1 "100 1 25 V nA mA A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.
25 A, di/dt = 100 A/ms VDD = 15 V V, , RL = 15 W ID ^ 1 A, A VGEN = 10 V V, RG = 6 W VDS = 15 V, V VGS = 10 V V, ID = 5.
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