4V Drive Nch MOS FET
Description
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RSS095N05
Transistor
4V Drive Nch MOS FET
RSS095N05
zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm)
SOP8
5.
0
0.
4
(8) (5)
1.
75
zFeatures 1) Built-in G-S Protection Diode.
2) Small Surface Mount Package (SOP8).
1pin mark
(1)
(4)
3.
9 6.
0
1.
27
0.
2
zApplications Power switching , DC / DC converter , Inverter
Each lead has same dimensions
zPackaging dimensions
Package Code
Basic ordering unit(pieces)
Taping TB 2500
zAbsolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol Limits VDSS 45 VGSS 20 ID ±9.
5 IDP *1 ±38 IS 1.
6 ISP 38 *1 PD 2 *2 Tch 150 Tstg -55 to +150 Unit V V A A A A W
o
zEquivalent circuit
(8) (7) (6) (5)
(8) (7) (6) (5)
∗2
∗1
(2) (3) (4)
(1) (2) (3) (4)
0.
4Min.
Total power dissipation Chanel temperature Range of Storage temperature *1 PW ≤10µｓ、Duty cycle≤1% *2 Mounted on a ceramic board
(1)
C o C
∗1 ESD Protection Diode.
∗2 Body Diode.
(1) (2) (3) (4) (5) (6) (7) (8)
Source Source Source Gate Drain Drain Drain Drain
∗ A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.
Use a protection circuit when the fixed voltage are exceeded.
zThermal resistance
Parameter Chanel to ambient * Mounted on a ceramic board Symbol Rth(ch-a)
*
Limits 62.
5
Unit
o
C/W
1/4
RSS095N05
Transistor
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
∗Pulsed
RDS (on)∗
Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd
∗
∗ ...
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