(OM6050SJ - OM6055SJ) HIGH CURRENT MOSFET
Description
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OM6050SJ OM6052SJ OM6054SJ OM6051SJ OM6053SJ OM6055SJ
HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)
High Current, High Voltage 100V Thru 1000V, Up To 100 Amp N-Channel, Size 7 MOSFETs, High Energy Capability
FEATURES
• • • • • • Isolated Hermetic Metal Package Size 7 Die, High Energy Fast Switching, Low Drive Current Ease Of Paralleling For Added Power Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology.
They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
This series also features avalanche high energy capability at elevated temperatures.
MAXIMUM RATINGS @ 25°C
PART NUMBER OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM6055SJ SCHEMATIC
1
VDS 100 V 200 V 500 V 600 V 800 V 1000 V
RDS(on) .
014 .
030 .
160 .
230 .
500 .
800
ID (Continuous) 100 A 55 A 30 A 25 A 18 A 10 A
3.
1
MECHANICAL OUTLINE
ø.
165 .
155 .
805 .
795 .
290 .
260 .
065 .
055
.
150 .
950 .
140 .
930
.
665 .
645
1 2 3 3
.
750 .
500 .
200 .
065 ø.
055
2
.
200
.
400
.
160
TO-267
4 11 R0
3.
1 - 105
OM6050SJ - OM6055SJ
ABSOLUTE MAXIMUM RATINGS (T
Parameter Drain Source Voltage Drain Gate Voltage (RGS = 1.
0 M ) Continuous Drain Current @ TC = 25°C 2 Continuous Drain Current @ TC = 100°C 2 Pulsed Drain Current1 Max.
Power Dissipation @ TC = 25°C Max.
Power Dissipation @ TC = 100°C Linear Derating Factor Junction-to-Case Linear Derating Factor Junction-to-Ambient Operating and Storage Temp.
Range TJ, Tstg Symbol VDS VDGR ID ID IDM PD PD
C
= 25 C unless otherwise noted)
Unit V V A A A W W W/°C W/°C °C °C
OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM6055SJ 100 100 100 43 235 200 200 55 23 135 500 500 30 13 80 280 110 2.
22 .
025...
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