Silicon N-Channel MOSFET
Description
TPCA8014-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPCA8014-H
High-Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications
0.
5±0.
1 1.
27 0.
4±0.
1
8
5
Unit: mm
0.
05 M A
6.
0±0.
3 5.
0±0.
2
• Small footprint due to a small and thin package • High-speed switching • Small gate charge: Qsw = 7.
4 nC (typ.
) • Low drain-source ON-resistance: RDS (ON) = 7.
1 mΩ (typ.
) • High forward transfer admittance: |Yfs| = 47 S (typ.
) • Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) • Enhancement mode: Vth = 1.
1 to 2.
3 V (VDS = 10 V, ID = 1 mA)
0.
15±0.
05
0.
95±0.
05
1
4
5.
0±0.
2
0.
595
A 0.
166±0.
05
S
0.
05 S
1
4 1.
1±0.
2
0.
6±0.
1 3.
5±0.
2
Absolute Maximum Ratings (Ta = 25°C)
4.
25±0.
2
Characteristic
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1) Pulsed (Note 1)
Drain power dissipation (Tc = 25℃)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc=25℃) (Note 4)
Channel temperature
Storage temperature range
Symbol VDSS VDGR VGSS
ID IDP PD PD
PD
EAS IAR EAR Tch Tstg
Rating
Unit
40
V
40
V
±20
V
30 A
90
45
W
2.
8
W
1.
6
W
84
mJ
30
A
2.
7
mJ
150
°C
−55 to 150
°C
8
5 0.
8±0.
1
1,2,3：SOURCE 4：GATE 5,6,7,8：DRAIN
JEDEC
―
JEITA
―
TOSHIBA
2-5Q1A
Weight: 0.
068 g (typ.
)
Circuit Configuration
8765
1234
Note: For Notes 1 to 5, refer to the next page.
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Ha...
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